Faculty of Engineering-architecture

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Personal Information

PROF. MUZAFFER ÇAKAR

Necmettin Erbakan University

Faculty of Engineering-architecture

Department of Basic Sciences

Department of Basic Sciences

E-mail :

Articles

Son Güncelleme: 22.12.2024

2019 The effect of anodic oxide treatment on n-GaAs Schottky barrier diodes

Uluslararası Hakemli SCI

	biber mehmet,ÇAKAR MUZAFFER,TURUT ABDULMECİT
	Journal of Materials Science: Materials in Electronics
	575 - 579
	09574522

2019 Rectifying pyronine-B/p-type silicon junctions formed by sublimation of pyronine-B

Uluslararası Hakemli SCI

	ÇAKAR MUZAFFER,TURUT ABDULMECİT,ONGANER YAVUZ
	Journal of Materials Science: Materials in Electronics
	47 - 53
	09574522

2014 On the electrical characteristics of the Al/rhodamine-101/p-Si MS structure at low temperatures

Uluslararası Hakemli SCI

	KARATAŞ ŞÜKRÜ,ÇAKAR MUZAFFER,Türüt Abdulmecit
	Materials Science in Semiconductor Processing
	135 - 143
	13698001

2009 Temperature dependence of the electrical and interface states of the Sn/Rhodamine-101/p-Si Schottky structures

Uluslararası Hakemli SCI-Expanded

	ÇAKAR MUZAFFER, KARATAŞ ŞÜKRÜ
	Synthetic Metals
	-
	0379-6779

2007 Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements

Uluslararası Hakemli SCI

	KARATAŞ ŞÜKRÜ,ALTINDAL ŞEMSETTİN,Türüt Abdülmecit,ÇAKAR MUZAFFER
	Physica B: Condensed Matter
	43 - 50
	09214526

2007 The conductance and capacitance–frequency characteristics of Au/pyronine-B/p-type Si/Al contacts

Uluslararası Hakemli SCI

	ÇAKAR MUZAFFER,YILDIRIM NEZİR,doğan hakan,TURUT ABDULMECİT
	Applied Surface Science
	3464 - 3468
	01694332

2006 Temperature dependence of the current–voltage characteristics of the Al/Rhodamine-101/p-Si(100) contacts

Uluslararası Hakemli SCI

	KARATAŞ ŞÜKRÜ,TEMİRCİ CABİR,ÇAKAR MUZAFFER,TURUT ABDULMECİT
	Applied Surface Science
	2209 - 2216
	01694332

2006 Current-voltage and capacitance-voltage characteristics of Sn/rhodamine-101/n-Si and Sn/rhodamine-101/p-Si Schottky barrier diodes

Uluslararası Hakemli SCI

	ÇAKAR MUZAFFER, YILDIRIM NEZİR, KARATAŞ ŞÜKRÜ, TEMİRCİ CABİR, TURUT ABDULMECİT
	JOURNAL OF APPLIED PHYSICS
	-
	0021-8979

2005 Current transport in Zn/p-Si(100) Schottky barrier diodes at high temperatures

Uluslararası Hakemli SCI-Expanded

	KARATAŞ ŞÜKRÜ,ALTINDAL ŞEMSETTİN,ÇAKAR MUZAFFER
	Physica B: Condensed Matter
	386 - 397
	09214526

2004 The Schottky barrier height of the rectifying Cu/pyronine-B/p-Si, Au/pyronine-B/p-Si, Sn/pyronine-B/p-Si and Al/pyronine-B/p-Si contacts

Uluslararası Hakemli SCI

	ÇAKAR MUZAFFER,TEMİRCİ CABİR,TURUT ABDULMECİT
	Synthetic Metals
	177 - 180
	03796779

2004 The current–voltage and capacitance–voltage characteristics of Cu/rhodamine 101/p-Si contacts

Uluslararası Hakemli SCI

	TEMİRCİ CABİR,ÇAKAR MUZAFFER
	Physica B: Condensed Matter
	454 - 458
	09214526

2004 The effects of the ageing on the characteristic parameters of polyaniline/p-type Si/Al structure

Uluslararası Hakemli SCI

	SAĞLAM MUSTAFA,biber mehmet,ÇAKAR MUZAFFER,TURUT ABDULMECİT
	Applied Surface Science
	404 - 410
	01694332

2002 The Conductance and Capacitance Frequency Characteristics of the Rectifying Junctions Formed by Sublimation of Organic Pyronine B on p Type Silicon

Uluslararası Hakemli SCI

	ÇAKAR MUZAFFER,TURUT ABDULMECİT,ONGANER YAVUZ
	Journal of Solid State Chemistry
	169 - 174
	00224596

2002 The nonpolymeric organic compound (pyronine-B)/p-type silicon/Sn contact barrier devices

Uluslararası Hakemli SCI

	ÇAKAR MUZAFFER,ONGANER YAVUZ,TURUT ABDULMECİT
	Synthetic Metals
	213 - 218
	03796779